Speakers

Nika Akopian 

DTU, Denmark

 

Martin Albrecht 

Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany

 

Yasuhiko Arakawa

University of Tokyo, Japan

 

Telecom band single photon sources from InAs/InP quantum dot nanowires

Nicolas Chauvin 

Institut des Nanosciences de Lyon, France

 

Joël Cibert

Institut Néel, Grenoble, France

 

George Cirlin

AU RAS, ITMO University, Russia

 

Mônica A. Cotta​

University of Campinas, Brazil

 

Nanowire quantum dots for quantum photonics

Dan Dalacu 

National Research Council of Canada

 

Bruno Daudin

CEA-IRIG, Grenoble, France

 

Complex heterostructures and quantum dots in III-As nanowires

Emmanouil Dimakis 

Helmholtz-Zentrum Dresden-Rossendorf, Germany

 

Vladimir Dubrovskii 

ITMO University, Russia

 

Lutz Geelhaar 

Paul Drude Institute for Solid State Electronics (PDI) Berlin, Germany

 

Evelyne GilL

University Clermont Auvergne, Clermont-Ferrand, France

 

Frank Glas

 C2N, CNRS, Université Paris-Sud, Université Paris-Saclay, France

 

To dopant incorporation and activation as n-type dopant in self-catalyzed nanowires

Teemu Hakkarainen 

Tampere University of Technology, Finland

 

Graphene as an ultimate substrate for GaN epitaxy

Jean-Christophe Harmand

C2N, Université Paris-Sud, Université Paris-Saclay, France

 

Semiconductor Nanowires for Optoelectronics Applications

Chennupati Jagadish 

Australian National University, Canberra

 

Composition dependence of the wurtzite-zinc blende crystal phases in InGaAs nanowires.

Calculation of hole concentrations in Zn doped GaAs nanowires.

Jonas Johansson 

Lund University, Sweden

 

Hybrid epitaxy - engineering band alignment in nanowire heterostructures

Peter Krogstrup 

University of Copenhagen, Denmark 

 

GaAs nanowires with twinning superlattices

Ray LaPierre

McMaster University, Canada

 

Synthesis of quasi-1D monolithic metal-semiconductor heterostructures for photonic applications

Alois Lugstein

 TU Vienna, Austria​

 

Nanostructure formation by solid dewetting

Pierre Müller 

Université d'Aix Marseille, CINa, France

 

Charge and spin-transport  in HVPE GaAs nanowires

Daniel Paget​ 

Ecole Polytechnique, France 

 

Valerio Piazza

EPFL Lausanne

 

Dislocations in III-nitride photonic heterostructures

Aleksei Romanov

ITMO University, Russia

 

Igor Shtrom

Alferov University,  Russia

 

Maria Tchernycheva 

University Paris Sud, France

 

TBD-2020

Jerry Tersoff 

IBM Research, Yorktown Heights, USA

 

Evgeny Viktorov 

ITMO University, Russia

 

Growth and strain relaxation mechanisms of InAs/InP/GaAsSb core-dual-shell nanowires

Valentina Zannier

Istituto Nanoscienze - CNR, Italy

 

Dagou Zeze 

Durham University, UK