Nika Akopian
DTU, Denmark
Martin Albrecht
Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany
Yasuhiko Arakawa
University of Tokyo, Japan
Telecom band single photon sources from InAs/InP quantum dot nanowires
Nicolas Chauvin
Institut des Nanosciences de Lyon, France
Joël Cibert
Institut Néel, Grenoble, France
George Cirlin
AU RAS, ITMO University, Russia
Mônica A. Cotta
University of Campinas, Brazil
Nanowire quantum dots for quantum photonics
Dan Dalacu
National Research Council of Canada
Bruno Daudin
CEA-IRIG, Grenoble, France
Complex heterostructures and quantum dots in III-As nanowires
Emmanouil Dimakis
Helmholtz-Zentrum Dresden-Rossendorf, Germany
Vladimir Dubrovskii
ITMO University, Russia
Lutz Geelhaar
Paul Drude Institute for Solid State Electronics (PDI) Berlin, Germany
Evelyne GilL
University Clermont Auvergne, Clermont-Ferrand, France
Frank Glas
C2N, CNRS, Université Paris-Sud, Université Paris-Saclay, France
To dopant incorporation and activation as n-type dopant in self-catalyzed nanowires
Teemu Hakkarainen
Tampere University of Technology, Finland
Graphene as an ultimate substrate for GaN epitaxy
Jean-Christophe Harmand
C2N, Université Paris-Sud, Université Paris-Saclay, France
Semiconductor Nanowires for Optoelectronics Applications
Chennupati Jagadish
Australian National University, Canberra
Composition dependence of the wurtzite-zinc blende crystal phases in InGaAs nanowires.
Calculation of hole concentrations in Zn doped GaAs nanowires.
Jonas Johansson
Lund University, Sweden
Hybrid epitaxy - engineering band alignment in nanowire heterostructures
Peter Krogstrup
University of Copenhagen, Denmark
GaAs nanowires with twinning superlattices
Ray LaPierre
McMaster University, Canada
Synthesis of quasi-1D monolithic metal-semiconductor heterostructures for photonic applications
Alois Lugstein
TU Vienna, Austria
Nanostructure formation by solid dewetting
Pierre Müller
Université d'Aix Marseille, CINa, France
Charge and spin-transport in HVPE GaAs nanowires
Daniel Paget
Ecole Polytechnique, France
Valerio Piazza
EPFL Lausanne
Dislocations in III-nitride photonic heterostructures
Aleksei Romanov
ITMO University, Russia
Igor Shtrom
Alferov University, Russia
Maria Tchernycheva
University Paris Sud, France
TBD-2020
Jerry Tersoff
IBM Research, Yorktown Heights, USA
Evgeny Viktorov
ITMO University, Russia
Growth and strain relaxation mechanisms of InAs/InP/GaAsSb core-dual-shell nanowires
Valentina Zannier
Istituto Nanoscienze - CNR, Italy
Dagou Zeze
Durham University, UK